| 1. | Study of ohmic contact to gan hemt epilayers
外延材料欧姆接触的研究 |
| 2. | Fabrication of ohmic contacts to 4h - sic created by ion - implantation
离子注入层的欧姆接触的制备 |
| 3. | Base ohmic contact
基极欧姆 |
| 4. | And we have built a system for testing the ohmic contact between metals and semiconductor materials
获得了比较低的欧姆接触率，并建立和完善了一套关于欧姆接触率测试的系统。 |
| 5. | 2 ^ algan - based sbd was made using ti / al and au as ohmic contact and schottky contact respectively
2 、利用ti al双层电极作欧姆接触， au电极作肖特基接触，制造出algan基肖特基二极管原型器件。 |
| 6. | The analysis of i - v characteristic and microstructure shows that the failure of device results from the gate sinking and ohmic contact degradation
通过温度斜坡试验，对器件试验前后的i - v特性的对比分析和微结构的分析表明，欧姆接触退化和栅下沉共同导致了器件的失效。 |
| 7. | We ' ve focused on improving the gan - metal ohmic contact characters and achieved some encouraging results . in addition , we ' ve finished some researched work on msm uv detector
在此基础上，在蓝宝石基和si基gan上制作了msm结构光导型探测器，并对msm探测器的结构进行了优化。 |
| 8. | The primary investigation of this paper is the ohmic contact between metafs ' and gan . moreover , we have prepared photodetectors and schottky diodes based on gan
本文的主要工作是对金属与n型gan的欧姆接触进行了研究，并在此基础上制备了硅基gan上的紫外探测器和gan肖特基二极管。 |
| 9. | At the same time , the rapid progress on devices requires better ohmic contact between metals and gan , for example , the short - wave ld requires specific contact resistivity lower than 10 - 4 cm2
Gan材料与金属欧姆接触的性能对器件有着重要的影响。低阻欧姆接触是gan基光电子器件所必需的。 |
| 10. | The main work includes three contents as followings : 1 , the situation of ohmic contact about al electrode , ti / al electrode on n - gan in different annealing conditions are investigated
主要工作如下： 1 、研究了al单层及ti al双层电极与n型gan在不同退火条件下的欧姆接触情况，并用挖补圆盘法计算出接触电阻率。 |
